JPS6159664B2 - - Google Patents

Info

Publication number
JPS6159664B2
JPS6159664B2 JP54025291A JP2529179A JPS6159664B2 JP S6159664 B2 JPS6159664 B2 JP S6159664B2 JP 54025291 A JP54025291 A JP 54025291A JP 2529179 A JP2529179 A JP 2529179A JP S6159664 B2 JPS6159664 B2 JP S6159664B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
gate
insulating film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54025291A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55118674A (en
Inventor
Isamu Myagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2529179A priority Critical patent/JPS55118674A/ja
Priority to US06/127,337 priority patent/US4343078A/en
Publication of JPS55118674A publication Critical patent/JPS55118674A/ja
Publication of JPS6159664B2 publication Critical patent/JPS6159664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2529179A 1979-03-05 1979-03-05 Fabricating method of semiconductor device Granted JPS55118674A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2529179A JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device
US06/127,337 US4343078A (en) 1979-03-05 1980-03-05 IGFET Forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2529179A JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55118674A JPS55118674A (en) 1980-09-11
JPS6159664B2 true JPS6159664B2 (en]) 1986-12-17

Family

ID=12161905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2529179A Granted JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55118674A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153370A (en) * 1979-05-18 1980-11-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS55118674A (en) 1980-09-11

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